A novel mems charge-pump circuit

Author

Tayel, Mazhar B. ; Mahmoud, Ahmed Kh

Author_Institution

Fac. of Eng., Alexandria Univ., Alexandria, Egypt

fYear

2015

fDate

1-3 July 2015

Firstpage

801

Lastpage

805

Abstract

This paper presents a novel MEMS charge-pump circuit design and simulation for PLL applications. The proposed circuit increases switching speed, minimizes power consumption and reduces the static Charge and Charge injection cancellation. The Advanced Design System (ADS), from Agilent Technologies are used in the proposed structure for high frequency applications. The use of electrostatic MEMS switches is attractive because of its advantages, such as very low power consumption, low insertion loss and high isolation. This paper introduces a use of special design MEMS as a charge pump circuit, replacing the GaAs FET switch with MEMS switch. The proposed charge pump circuit can generate higher output voltage with 66.3% improvement when compared with the charge pump using MOS devices.

Keywords

MIS devices; charge injection; charge pump circuits; gallium arsenide; integrated circuit design; microswitches; phase locked loops; ADS; Agilent Technologies; GaAs; GaAs FET switch; MEMS charge-pump circuit design; MOS devices; PLL applications; advanced design system; charge injection cancellation; electrostatic MEMS switches; low insertion loss; phase locked loop; static charge; Charge pumps; Frequency control; Frequency conversion; Micromechanical devices; Phase frequency detector; Phase locked loops; Voltage-controlled oscillators; GaAs FET switch; MEMS; MEMS switch; PLL charge-pump;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Communication Technology (ICACT), 2015 17th International Conference on

Conference_Location

Seoul

Print_ISBN

978-8-9968-6504-9

Type

conf

DOI

10.1109/ICACT.2015.7224905

Filename

7224905