DocumentCode :
1879385
Title :
A novel mems charge-pump circuit
Author :
Tayel, Mazhar B. ; Mahmoud, Ahmed Kh
Author_Institution :
Fac. of Eng., Alexandria Univ., Alexandria, Egypt
fYear :
2015
fDate :
1-3 July 2015
Firstpage :
801
Lastpage :
805
Abstract :
This paper presents a novel MEMS charge-pump circuit design and simulation for PLL applications. The proposed circuit increases switching speed, minimizes power consumption and reduces the static Charge and Charge injection cancellation. The Advanced Design System (ADS), from Agilent Technologies are used in the proposed structure for high frequency applications. The use of electrostatic MEMS switches is attractive because of its advantages, such as very low power consumption, low insertion loss and high isolation. This paper introduces a use of special design MEMS as a charge pump circuit, replacing the GaAs FET switch with MEMS switch. The proposed charge pump circuit can generate higher output voltage with 66.3% improvement when compared with the charge pump using MOS devices.
Keywords :
MIS devices; charge injection; charge pump circuits; gallium arsenide; integrated circuit design; microswitches; phase locked loops; ADS; Agilent Technologies; GaAs; GaAs FET switch; MEMS charge-pump circuit design; MOS devices; PLL applications; advanced design system; charge injection cancellation; electrostatic MEMS switches; low insertion loss; phase locked loop; static charge; Charge pumps; Frequency control; Frequency conversion; Micromechanical devices; Phase frequency detector; Phase locked loops; Voltage-controlled oscillators; GaAs FET switch; MEMS; MEMS switch; PLL charge-pump;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Communication Technology (ICACT), 2015 17th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-8-9968-6504-9
Type :
conf
DOI :
10.1109/ICACT.2015.7224905
Filename :
7224905
Link To Document :
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