• DocumentCode
    1879509
  • Title

    Role of the dopant counter-ions in the transport and magnetic properties of disordered conducting polymers

  • Author

    Zuppiroli, L.

  • Author_Institution
    Swiss Federal Institute of Technology
  • fYear
    1994
  • fDate
    24-29 July 1994
  • Firstpage
    14
  • Lastpage
    14
  • Abstract
    Summary form only given. Disordered conducting polymers like polypyrroles or even some of the polyanilines contain generally short electroactive chains with conjugation lengths of a few ten monomers. Most of the electronic properties of these materials cannot be really understood in terms of quasi-one-dimensional models. i) Why in the fully doped materials the number of Curie spins is always lower than half the number of segments? ii) Why these disordered materials exhibit a Pauli-like component in their spin- susceptibility? iii) Why are the conductivities of all the fully doped materials roughly of the same order of magnitude (0.1 to 10 S/cm) independent of the micro structures and chain lengths? iv) Why the same value of the conductivity is found in thin films of doped oligomers? All these questions can be resolved if the interactions between the carriers and the dopant counter-ions are properly accounted for. It is then possible to derive a new interpretation of the spin-charge relation and of the so-called Curie and Pauli contributions to the susceptibility. Moreover the dopant ion is ultimately responsible for 3D localization through formation of transverse bipolarons connecting neighbour chains via enhanced tunnelling probability close to a counter-ion. Thus the hopping process through the disordered material can be revisited in relation with these new concepts.
  • Keywords
    Conducting materials; Conductivity; Electrons; Magnetic properties; Metastasis; Photoluminescence; Polymers; Semiconductivity; Solitons; Stationary state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Science and Technology of Synthetic Metals, 1994. ICSM '94. International Conference on
  • Conference_Location
    Seoul, Korea
  • Type

    conf

  • DOI
    10.1109/STSM.1994.834650
  • Filename
    834650