Title :
InP HEMT and HBT applications beyond 200 GHz
Author :
Streit, Dwight ; Lai, Richard ; Oki, Aaron ; Gutierrez-Aitken, Augusto
Author_Institution :
TRW Space & Electron., Velocium, El Segundo, CA, USA
Abstract :
InP HEMT and InP HBT offer significant performance advantages for applications that range from microwave and millimeter-wave to fast digital and optoelectronic circuits. The improved transport characteristics, high transconductance, and optical integration properties of these devices hold great benefit for wireless and fiber-optic communications, radar, passive imaging and radiometer systems. We present an overview of recent results for InP devices and integrated circuits, including the current status of TRW´s InP HEMT and HBT device and MMIC performance. The migration to new materials and process technology will enable volume production capability for high-performance applications to 200 GHz and beyond.
Keywords :
HEMT integrated circuits; III-V semiconductors; bipolar MIMIC; bipolar MMIC; digital integrated circuits; field effect MIMIC; field effect MMIC; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated circuit technology; integrated optoelectronics; millimetre wave bipolar transistors; millimetre wave field effect transistors; millimetre wave imaging; power integrated circuits; radiometers; 200 GHz; EHF; InP; InP HBT applications; InP HEMT applications; MM-wave MMIC performance; MM-wave operation; TRW; discrete devices; fast digital circuits; integrated circuits; optoelectronic circuits; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Laser radar; Microwave circuits; Microwave devices; Millimeter wave integrated circuits; Millimeter wave radar; Millimeter wave technology; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014077
