Title :
25 GHz HBT frequency dividers
Author :
Nubling, R.B. ; Sheng, N.H. ; Wang, K.C. ; Chang, M.F. ; Ho, W.J. ; Sullivan, G.J. ; Farley, C.W. ; Asbeck, P.M.
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Abstract :
A report is presented on a regenerative frequency divider and a static frequency divider implemented with (AlGa)As/GaAs heterojunction bipolar transistors (HBTs). Both dividers have been operated at input frequencies higher than 25 GHz. Also described is a frequency divider implemented with AlInAs/GaInAs HBTs operating up to 17.1 GHz, at considerably reduced power. These frequency dividers are among the fastest ever reported for each of these circuit types and illustrate the feasibility of using direct frequency division in microwave systems up to K/sub u/ band.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; counting circuits; frequency dividers; gallium arsenide; indium compounds; 17.1 GHz; 25 GHz; AlGaAs-GaAs; AlInAs-GaInAs; HBTs; K/sub u/ band; direct frequency division in microwave systems; heterojunction bipolar transistors; regenerative frequency divider; semiconductors; static frequency divider; Capacitance; Costs; Doping; Electrons; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Latches; Microwave circuits; Optical frequency conversion;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69309
