High performance 1.32 μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy

GaInNAs/GaAs quantum well (QW) structures and lasers are grown by molecular beam epitaxy (MBE) using an RF-plasma source. Optimal GaInNAs/GaAs QW structures have been designed and grown in order to achieve the brightest and narrowest photoluminescence (PL) spectra beyond 1.30 μm. State-of-the-art GaInNAs/GaAs SQW lasers operating at 1.32 μm have been demonstrated. For a broad area oxide stripe, uncoated Fabry-Perot laser with a cavity length of 1600 μm, threshold current density as low as 546 A/cm² is obtained at room temperature. Optical output up to 40 mW per facet under continuous wave operation is achieved for these uncoated lasers at room temperature.