Enhanced large signal laser modeling including thermal effects for analog communications

Author

Ghoniemy, S. ; MacEachern, L. ; Mahmoud, S.

Author_Institution

Carleton Univ., Ottawa, Ont., Canada

fYear

2002

fDate

2002

Firstpage

21

Lastpage

24

Abstract

Enhanced normalized laser rate equations suitable for large signal analyses and system level simulations are discussed. A large signal laser model including thermal effects and incorporating a modified laser gain formulation is presented. Symbolically defined devices (SDDs) implemented in the Hewlett Packard Advanced Design System (HP-ADS) are constructed using the proposed laser model. The effects of temperature on the transient response characteristics of 1.3 μm InGaAsP/InP Fabry-Perot lasers are predicted using the SDD implementation.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; laser transitions; optical transmitters; semiconductor device models; semiconductor lasers; thermo-optical effects; 1.3 micron; Hewlett Packard Advanced Design System; InGaAsP-InP; InGaAsP/InP Fabry-Perot lasers; analog communications; large signal analyses; large signal laser modeling; laser model; modified laser gain formulation; normalized laser rate equations; symbolically defined devices; system level simulations; thermal effects; transient response characteristics; Charge carrier density; Indium phosphide; Laser modes; Laser noise; Nonlinear equations; Predictive models; Semiconductor lasers; Temperature dependence; Temperature distribution; Transient response;

fLanguage

English

Publisher

ieee

Conference_Titel

4thLaser and Fiber-Optical Networks Modeling, 2002. Proceedings of LFNM 2002. International Workshop on

Print_ISBN

0-7803-7372-3

Type

conf

DOI

10.1109/LFNM.2002.1014090

Filename

1014090