DocumentCode :
1880094
Title :
High speed (207 GHz fτ), low thermal resistance, high current density metamorphic InP/InGaAs/InP DHBTs grown on a GaAs substrate
Author :
Kim, Y.M. ; Dahlstrom, M. ; Lee, S. ; Wei, Y. ; Rodwell, M.J.W. ; Gossard, A.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear :
2002
fDate :
2002
Firstpage :
39
Lastpage :
41
Abstract :
InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors (HBTs) were grown on GaAs substrates. InP layer was employed as a metamorphic buffer layer because of its high thermal conductivity. A 140 GHz power-gain cutoff frequency fmax and a 207 GHz current-gain cutoff frequency fτ were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BVCEO was 6 V while the DC current gain β was 76.
Keywords :
current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; semiconductor device reliability; thermal conductivity; thermal resistance; 140 GHz; 207 GHz; 6 V; DHBTs; GaAs; GaAs substrates; InP-In0.53Ga0.47As-InP-GaAs; InP/In0.53Ga0.47As/InP; breakdown voltage; current density; current-gain cutoff frequency; metamorphic buffer layer; power-gain cutoff frequency; thermal conductivity; thermal resistance; Buffer layers; Current density; Current measurement; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Substrates; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN :
1092-8669
Print_ISBN :
0-7803-7320-0
Type :
conf
DOI :
10.1109/ICIPRM.2002.1014092
Filename :
1014092
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1880094
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