High frequency SiGe heterostructure devices

Author

König, U. ; Gruhle, A.

Author_Institution

Res. Center, Daimler-Benz AG, Ulm, Germany

fYear

1997

fDate

4-6 Aug 1997

Firstpage

14

Lastpage

23

Abstract

Only in recent years have SiGe/Si heterodevices entered the semiconductor world. In particular, the SiGe heterojunction bipolar transistor (SiGe HBT) has demonstrated a record f_max value of 160 GHz. The SiGe heterojunction field effect transistor (SiGe HFET) is presently catching up in performance with a reported speed of 92 GHz. This paper reviews device and circuit results focusing on cut-off frequencies, delays, noise and power. An important issue is the compatibility to the dominating silicon technology which opens perspectives for new generations of high volume and low cost microelectronic components

Keywords

Ge-Si alloys; delays; heterojunction bipolar transistors; microwave bipolar transistors; microwave field effect transistors; millimetre wave bipolar transistors; millimetre wave field effect transistors; semiconductor device noise; semiconductor materials; 160 GHz; 92 GHz; HF SiGe heterostructure devices; SiGe HBT; SiGe HFET; SiGe-Si; SiGe/Si heterodevices; cutoff frequencies; delays; heterojunction FET; heterojunction bipolar transistor; heterojunction field effect transistor; noise; Germanium alloys;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1997. Proceedings., 1997 IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

ISSN

1079-4700

Print_ISBN

0-7803-3970-3

Type

conf

DOI

10.1109/CORNEL.1997.649338

Filename

649338