Title :
High frequency SiGe heterostructure devices
Author :
König, U. ; Gruhle, A.
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
Abstract :
Only in recent years have SiGe/Si heterodevices entered the semiconductor world. In particular, the SiGe heterojunction bipolar transistor (SiGe HBT) has demonstrated a record fmax value of 160 GHz. The SiGe heterojunction field effect transistor (SiGe HFET) is presently catching up in performance with a reported speed of 92 GHz. This paper reviews device and circuit results focusing on cut-off frequencies, delays, noise and power. An important issue is the compatibility to the dominating silicon technology which opens perspectives for new generations of high volume and low cost microelectronic components
Keywords :
Ge-Si alloys; delays; heterojunction bipolar transistors; microwave bipolar transistors; microwave field effect transistors; millimetre wave bipolar transistors; millimetre wave field effect transistors; semiconductor device noise; semiconductor materials; 160 GHz; 92 GHz; HF SiGe heterostructure devices; SiGe HBT; SiGe HFET; SiGe-Si; SiGe/Si heterodevices; cutoff frequencies; delays; heterojunction FET; heterojunction bipolar transistor; heterojunction field effect transistor; noise; Germanium alloys;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1997. Proceedings., 1997 IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1997.649338
