DocumentCode
1880133
Title
A Comparison Between Tunable Fbars with an Integrated and with a Discrete Variable MEMS Capacitor
Author
Pan, Wanling ; Soussan, Philippe ; Nauwelaers, Bart ; Mertens, Robert P. ; Tilmans, Harrie A C
Author_Institution
IMEC, Kapeldreef 75, B-3001, Leuven, BELGIUM; ESAT, Katholieke Universiteit Leuven, B-3001, Leuven, BELGIUM, E-mail: wanling@ieee.org
fYear
2006
fDate
2006
Firstpage
902
Lastpage
905
Abstract
A comparison between two types of frequency tunable film bulk acoustic resonators (FBARs) is presented in this paper. In both types, the frequency tuning is based on a variable MEMS capacitor connected in series with the piezoelectric resonating layer. The difference is in the embodiment of the capacitor, which can be either a discrete element or an integrated part of the device. It is shown that the integrated approach not only reduces the device area by about half, but also gives better fabrication compatibility, and renders on average a quality factor more than 30% higher than the discrete approach.
Keywords
Capacitors; Electrodes; Fabrication; Film bulk acoustic resonators; Frequency; Integrated circuit interconnections; Micromechanical devices; Q factor; Tunable circuits and devices; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
Conference_Location
Istanbul, Turkey
ISSN
1084-6999
Print_ISBN
0-7803-9475-5
Type
conf
DOI
10.1109/MEMSYS.2006.1627946
Filename
1627946
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