• DocumentCode
    1880182
  • Title

    Temperature Compensated IBAR Reference Oscillators

  • Author

    Ho, Gavin K. ; Sundaresan, Krishnakumar ; Pourkamali, Siavash ; Ayazi, Farrokh

  • Author_Institution
    School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
  • fYear
    2006
  • fDate
    2006
  • Firstpage
    910
  • Lastpage
    913
  • Abstract
    This work presents a two-chip automatically temperature-compensated micromechanical IBAR reference oscillator with a temperature drift of 39ppm over 100 ° C. Temperature compensation is provided by a parabolic VPcorrection scheme and provides 10X improvement over previously reported results. Tunable 6MHz, 10MHz, and 20MHz resonators were characterized with 2000– 4500ppm tuning and Q up to 119000. Motional impedances as low as 218Ω were extracted from measurement data with VP= 18V. The interface IC for temperature compensation and oscillation consumes only 1.9mW. Measurements also show that temperature compensation of a 10MHz resonator with 65nm gaps is possible with less than 5V.
  • Keywords
    Electrodes; Electrostatics; Frequency; Impedance; Micromechanical devices; Oscillators; Silicon; Stability; Temperature; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
  • Conference_Location
    Istanbul, Turkey
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-9475-5
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2006.1627948
  • Filename
    1627948