DocumentCode :
1880182
Title :
Temperature Compensated IBAR Reference Oscillators
Author :
Ho, Gavin K. ; Sundaresan, Krishnakumar ; Pourkamali, Siavash ; Ayazi, Farrokh
Author_Institution :
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
fYear :
2006
fDate :
2006
Firstpage :
910
Lastpage :
913
Abstract :
This work presents a two-chip automatically temperature-compensated micromechanical IBAR reference oscillator with a temperature drift of 39ppm over 100 ° C. Temperature compensation is provided by a parabolic VPcorrection scheme and provides 10X improvement over previously reported results. Tunable 6MHz, 10MHz, and 20MHz resonators were characterized with 2000– 4500ppm tuning and Q up to 119000. Motional impedances as low as 218Ω were extracted from measurement data with VP= 18V. The interface IC for temperature compensation and oscillation consumes only 1.9mW. Measurements also show that temperature compensation of a 10MHz resonator with 65nm gaps is possible with less than 5V.
Keywords :
Electrodes; Electrostatics; Frequency; Impedance; Micromechanical devices; Oscillators; Silicon; Stability; Temperature; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
Conference_Location :
Istanbul, Turkey
ISSN :
1084-6999
Print_ISBN :
0-7803-9475-5
Type :
conf
DOI :
10.1109/MEMSYS.2006.1627948
Filename :
1627948
Link To Document :
بازگشت