DocumentCode
1880182
Title
Temperature Compensated IBAR Reference Oscillators
Author
Ho, Gavin K. ; Sundaresan, Krishnakumar ; Pourkamali, Siavash ; Ayazi, Farrokh
Author_Institution
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
fYear
2006
fDate
2006
Firstpage
910
Lastpage
913
Abstract
This work presents a two-chip automatically temperature-compensated micromechanical IBAR reference oscillator with a temperature drift of 39ppm over 100 ° C. Temperature compensation is provided by a parabolic VP correction scheme and provides 10X improvement over previously reported results. Tunable 6MHz, 10MHz, and 20MHz resonators were characterized with 2000– 4500ppm tuning and Q up to 119000. Motional impedances as low as 218Ω were extracted from measurement data with VP = 18V. The interface IC for temperature compensation and oscillation consumes only 1.9mW. Measurements also show that temperature compensation of a 10MHz resonator with 65nm gaps is possible with less than 5V.
Keywords
Electrodes; Electrostatics; Frequency; Impedance; Micromechanical devices; Oscillators; Silicon; Stability; Temperature; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
Conference_Location
Istanbul, Turkey
ISSN
1084-6999
Print_ISBN
0-7803-9475-5
Type
conf
DOI
10.1109/MEMSYS.2006.1627948
Filename
1627948
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