Lateral oxide current aperture for InP-based vertical electron current flow devices: Demonstration using RTD´s

We demonstrate current aperturing of InP-based resonant tunneling diodes using partial lateral oxidation of AlAsSb. The current aperturing can be used to accurately tune the peak current of the resonant tunneling diodes to a desired level. This tuning capability enhances device parameter control, and improves the yield and mass production feasibility of integrated circuits containing resonant tunneling diodes. Our results indicate that the current aperturing structure appears not to significantly degrade the transport properties of an upstream electronic device. The current aperture technology requires minimal processing overhead, and is applicable to other vertical electron current flow InP-based electronic and optoelectronic devices