DocumentCode :
1880243
Title :
MSI InP/InGaAs DHBT technology: beyond 40 Gbit/s circuits
Author :
Blayac, S. ; Riet, M. ; Benchimol, J.L. ; Alexandre, F. ; Berdaguer, P. ; Kahn, M. ; Pinquier, A. ; Dutisseuil, E. ; Moulu, J. ; Kasbari, A. ; Konczykowska, A. ; Godin, J.
Author_Institution :
R&I/OPTO+, Alcatel, Marcoussis, France
fYear :
2002
fDate :
2002
Firstpage :
51
Lastpage :
54
Abstract :
We present current results obtained on IC-oriented OPTO+ InP DHBT lab technology. Transistors with 180/210 GHz Ft/Fmax, current gain of 50 and BVce0=7V are currently fabricated with >99% fabrication yield. Uniformity measurements show a standard deviation on Ft and Fmax lower than 2% and lower than 5% on all investigated parameters. In a second part DHBT-specific modelling issues are discussed. A 68 Gbit/s selector has been obtained and a 40 Gbit/s master-slave D-type flip-flop (MS-DFF) has been reproducibly fabricated with >50% functional yield using this technology.
Keywords :
III-V semiconductors; bipolar digital integrated circuits; flip-flops; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit modelling; integrated circuit yield; 180 GHz; 210 GHz; 40 Gbit/s; 68 Gbit/s; 7 V; DHBT; DHBT-specific modelling issues; IC-oriented OPTO+ technology; InP-InGaAs; InP/InGaAs; MS-DFF; MSI; current gain; fabrication yield; functional yield; master-slave D-type flip-flop; standard deviation; uniformity measurements; Current measurement; DH-HEMTs; Density measurement; Fabrication; Gain measurement; Indium gallium arsenide; Indium phosphide; Integrated circuit interconnections; Polyimides; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN :
1092-8669
Print_ISBN :
0-7803-7320-0
Type :
conf
DOI :
10.1109/ICIPRM.2002.1014099
Filename :
1014099
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1880243
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