In situ microwave characterization of insulator thin films for interconnects of advanced circuits

Author

Flichet, B. ; Bermond, C. ; Ferrari, P. ; Angenieux, G.

Author_Institution

LAHC, Univ. de Savoie, Bourget-du-Luc, France

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

961

Abstract

An accurate and simple method to in-situ characterize the dielectric constant of insulator thin films is developed. Optimized devices under test are capacitive patches where insulator film is set in the future operational configuration. Dielectric constant is extracted by an optimization procedure based upon subnanosecond time domain reflectometry measurement and simulation. /spl epsiv//sub r/ is given into a 100 MHz-10 GHz frequency bandwidth.

Keywords

insulating thin films; integrated circuit interconnections; microwave reflectometry; permittivity measurement; time-domain reflectometry; 100 MHz to 10 GHz; capacitive patch; circuit interconnect; device under test; dielectric constant; in situ microwave measurement; insulator thin film; optimization; simulation; time domain reflectometry; Dielectric constant; Dielectric measurements; Dielectric thin films; Dielectrics and electrical insulation; Frequency measurement; Insulator testing; Microwave devices; Optical films; Reflectometry; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705151

Filename

705151