• DocumentCode
    1880692
  • Title

    Thermal resistance characterization of 200 GHz Ft InGaAs/InAlAs HBTs

  • Author

    Fields, C.H. ; Foschaar, J. ; Thomas, S.

  • Author_Institution
    HRL Labs., Malibu, CA, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    79
  • Lastpage
    82
  • Abstract
    We present the results of measurements of the thermal resistivity of InP-based HBTs with cutoff frequencies, ft ∼200 GHz and with fmax over 300 GHz. The measurements were on full-thickness 3" InP wafers at Tamb from 30 - 210°C and three separate emitter current densities. We present data on three device sizes and two device layouts and discuss the relationship of Vbe to temperature at these elevated power and temperature levels.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device measurement; thermal resistance; 200 GHz; 3 in; 30 to 210 degC; InGaAs-InAlAs; InGaAs/InAlAs HBTs; device layouts; device sizes; elevated power levels; elevated temperature levels; emitter current densities; full-thickness InP wafers; thermal resistance characterization; thermal resistivity; Conductivity; Current density; Current measurement; Cutoff frequency; Density measurement; Electrical resistance measurement; Frequency measurement; Indium phosphide; Temperature; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-7320-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2002.1014116
  • Filename
    1014116
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1880692