A high output power density 400/400V isolated DC/DC converter with hybrid pair of SJ-MOSFET and SiC-SBD for power supply of data center

Author

Simanjorang, Rejeki ; Yamaguchi, Hiroshi ; Ohashi, Hiromichi ; Takeda, Takashi ; Yamazaki, Mikio ; Murai, H.

Author_Institution

Energy Semicond. Electron. Res. Lab., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2010

fDate

21-25 Feb. 2010

Firstpage

648

Lastpage

653

Abstract

In this paper, a design of high output power density 400/400V isolated dc/dc converter for power supply in data center is discussed. The isolated DC/DC converter uses the hybrid pair of SJ-MOSFET and SiC-SBD power devices. A high accuracy of DC/DC converter analysis is carried out by considering the intrinsic and extrinsic loss parameter of power devices and circuit board. Based on this analysis, the efficiency and power density of isolated DC/DC converter are estimated for various high switching frequencies (100 kHz, 200 kHz and 300 kHz) and various junction temperatures of power switching devices (125Â°C and 150Â°C). The analysis estimates that the isolated DC/DC converter with efficiency around 97% and power density equal to or larger than 10 W/cm³ is possible to be realized. To verify the estimation results, 10-W/cm³ class power density of 5kW isolated DC/DC converter is fabricated and current results are shown in this paper.

Keywords

DC-DC power convertors; MOSFET; power supply circuits; silicon compounds; wide band gap semiconductors; SJ-MOSFET; SiC-SBD power devices; circuit board; data center; extrinsic loss parameter; frequency 100 kHz; frequency 200 kHz; frequency 300 kHz; high output power density; hybrid pair; intrinsic loss parameter; isolated DC-DC converter; power supply; power switching devices; temperature 125 degC; temperature 150 degC; voltage 400 V; Capacitance; DC-DC power converters; HVDC transmission; Low voltage; Power generation; Power supplies; Resonance; Switching converters; Temperature; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE

Conference_Location

Palm Springs, CA

ISSN

1048-2334

Print_ISBN

978-1-4244-4782-4

Electronic_ISBN

1048-2334

Type

conf

DOI

10.1109/APEC.2010.5433601

Filename

5433601