Title :
A high output power density 400/400V isolated DC/DC converter with hybrid pair of SJ-MOSFET and SiC-SBD for power supply of data center
Author :
Simanjorang, Rejeki ; Yamaguchi, Hiroshi ; Ohashi, Hiromichi ; Takeda, Takashi ; Yamazaki, Mikio ; Murai, H.
Author_Institution :
Energy Semicond. Electron. Res. Lab., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
In this paper, a design of high output power density 400/400V isolated dc/dc converter for power supply in data center is discussed. The isolated DC/DC converter uses the hybrid pair of SJ-MOSFET and SiC-SBD power devices. A high accuracy of DC/DC converter analysis is carried out by considering the intrinsic and extrinsic loss parameter of power devices and circuit board. Based on this analysis, the efficiency and power density of isolated DC/DC converter are estimated for various high switching frequencies (100 kHz, 200 kHz and 300 kHz) and various junction temperatures of power switching devices (125°C and 150°C). The analysis estimates that the isolated DC/DC converter with efficiency around 97% and power density equal to or larger than 10 W/cm3 is possible to be realized. To verify the estimation results, 10-W/cm3 class power density of 5kW isolated DC/DC converter is fabricated and current results are shown in this paper.
Keywords :
DC-DC power convertors; MOSFET; power supply circuits; silicon compounds; wide band gap semiconductors; SJ-MOSFET; SiC-SBD power devices; circuit board; data center; extrinsic loss parameter; frequency 100 kHz; frequency 200 kHz; frequency 300 kHz; high output power density; hybrid pair; intrinsic loss parameter; isolated DC-DC converter; power supply; power switching devices; temperature 125 degC; temperature 150 degC; voltage 400 V; Capacitance; DC-DC power converters; HVDC transmission; Low voltage; Power generation; Power supplies; Resonance; Switching converters; Temperature; Topology;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE
Conference_Location :
Palm Springs, CA
Print_ISBN :
978-1-4244-4782-4
Electronic_ISBN :
1048-2334
DOI :
10.1109/APEC.2010.5433601
