Impact of spatial hole burning on modulation response of vertical cavity surface emitting lasers

Author

Schatz, R. ; Peeters, M. ; Isik, H.

Author_Institution

Lab. of Photonics, R. Inst. of Technol., Stockholm, Sweden

fYear

2002

fDate

2002

Firstpage

108

Lastpage

111

Abstract

It has been long known that spatial hole burning (SHB) has a profound influence on the characteristics of semiconductor lasers. SHB refers to the local depletion of the carrier density at points within the laser where the modal intensity is large. The depletion will reduce the overlap between the gain distribution and photon distribution for the lasing mode. This will in general lead to an increase of the average carrier density to maintain the threshold gain needed for lasing. It will also often lead to reduced side mode suppression since the gain carrier overlap may increase for a competing side mode with different intensity distribution than the main mode. In this paper we theoretically investigate the influence SHB has on the VCSEL modulation response.

Keywords

carrier density; electro-optical modulation; optical hole burning; semiconductor lasers; surface emitting lasers; VCSEL modulation response; average carrier density; competing side mode; gain carrier overlap; intensity distribution; lasing mode; modal intensity; modulation response; reduced side mode suppression; semiconductor lasers; spatial hole burning; threshold gain; vertical cavity surface emitting lasers; Charge carrier density; Chirp modulation; Equations; Laser modes; Laser theory; Photonics; Semiconductor lasers; Spatial resolution; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

4thLaser and Fiber-Optical Networks Modeling, 2002. Proceedings of LFNM 2002. International Workshop on

Print_ISBN

0-7803-7372-3

Type

conf

DOI

10.1109/LFNM.2002.1014125

Filename

1014125