DocumentCode :
1880968
Title :
Contact potential imaging of cleaved mirror surface of 1.3 μm buried heterostructure laser diodes by Kelvin probe force microscopy
Author :
Mizutani, Takashi ; Kato, Kenji ; Yamagata, Tetsuji ; Kishimoto, Sigeru ; Yamamoto, Norio ; Kondo, Yasuhiro
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Japan
fYear :
2002
fDate :
2002
Firstpage :
95
Lastpage :
98
Abstract :
We have successfully obtained the contact potential images of cleaved mirror surface of 1.3 μm buried heterostructure laser diodes by Kelvin probe force microscopy. Embedded current blocking layer and mesa-etched active region were clearly recognized. A potential dip was observed at the regrowth interface. Carrier accumulation in the MQW active layer was pointed out.
Keywords :
contact potential; laser cavity resonators; laser transitions; quantum well lasers; scanning probe microscopy; semiconductor device measurement; 1.3 micron; BH LD; Kelvin probe force microscopy; MQW active layer; buried heterostructure laser diodes; carrier accumulation; cleaved mirror surface; contact potential imaging; embedded current blocking layer; mesa-etched active region; potential dip; regrowth interface; semiconductor lasers; Atomic force microscopy; Electrostatic measurements; Force measurement; Kelvin; Mirrors; Probes; Quantum well devices; Surface emitting lasers; Surface topography; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN :
1092-8669
Print_ISBN :
0-7803-7320-0
Type :
conf
DOI :
10.1109/ICIPRM.2002.1014127
Filename :
1014127
Link To Document :
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