Energetics and fs-dynamics at [100] surfaces of MOCVD-grown III-V semiconductors

Author

Hannappel, T. ; Töben, L. ; Möller, K. ; Gundlach, L. ; Ernstorfer, Ralph ; Eichberger, R. ; Willig, F.

Author_Institution

Hahn-Meitner-Inst., Berlin, Germany

fYear

2002

fDate

2002

Firstpage

99

Lastpage

102

Abstract

MOCVD-preparation of ordered [100] surfaces of InP and GaP was monitored in-situ with reflectance difference/anisotropy spectroscopy (RDS/RAS). RDS was measured at 20 K after contamination-free transfer of the sample to UHV. Specific RD spectra with the highest peaks and fine structure were correlated with different ordered surface reconstructions. The ordered In-rich InP[100] surface was investigated with femtosecond 2PPE. Surface states and surface resonances near the Γ-point showed up as peaks in the 2PPE spectrum in agreement with theoretical predictions.

Keywords

III-V semiconductors; MOCVD coatings; fine structure; gallium compounds; indium compounds; reflectivity; surface dynamics; surface energy; surface reconstruction; surface states; ultraviolet spectra; visible spectra; 20 K; GaP; III-V semiconductors; InP; MOCVD; RDS/RAS; [100]surface; femtosecond 2PPE; fine structure; fs-dynamics; ordered In-rich InP[100] surface; reflectance difference/anisotropy spectroscopy; surface reconstruction; surface resonance; surface states; Anisotropic magnetoresistance; III-V semiconductor materials; Indium phosphide; Monitoring; Pollution measurement; Reflectivity; Resonance; Spectroscopy; Surface contamination; Surface reconstruction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014130

Filename

1014130