Title :
Two- and three-sectional laterally coupled DBR laser fabricated by focused ion beam lithography
Author :
Bach, L. ; Wolf, A. ; Reithmaier, J.P. ; Forchel, A. ; Gentner, J.L. ; Goldstein, L.
Author_Institution :
Technische Phys., Wurzburg Univ., Germany
Abstract :
By using focused ion beam lithography, high performance 1.55 μm emitting distributed Bragg reflector lasers were realized suitable for high speed optical telecommunication. Threshold currents of 8 mA and continuous wave efficiencies of 0.37 W/A for 600 μm long devices were achieved. Stable single mode emission with side mode suppression ratios of > 40 dB were observed for the entire operation range. By using 3-sectional DBR-lasers, we could increase the output power of the lasers up to 68 mW. Also we achieved a higher single mode yield with side mode suppression ratios of more than 60 dB and a higher thermal stability.
Keywords :
distributed feedback lasers; focused ion beam technology; ion beam lithography; laser modes; laser stability; laser transitions; optical communication equipment; optical fabrication; quantum well lasers; thermal stability; 1.55 micron; 600 micron; 68 mW; FIB lithography; InGaAsP-InP; MQW laser structure; distributed Bragg reflector lasers; focused ion beam lithography; high speed optical telecommunication; laterally coupled DBR lasers; semiconductor lasers; side mode suppression; stable single mode emission; thermal stability; three-sectional DBR laser; two-sectional DBR lasers; Distributed Bragg reflectors; High speed optical techniques; Ion beams; Laser modes; Lithography; Optical coupling; Particle beam optics; Power generation; Stimulated emission; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014132
