A low frequency AC method to measure the doping profile in the channel region of a MOSFET with general extendability to the semiconductor surface

Author

Kendall, J.D. ; Kolk, J.K. ; Boothroyd, A.R. ; Vincent, D.A.

Author_Institution

Northern Telecom Ltd., Ottawa, Ont., Canada

fYear

1993

fDate

22-25 Mar 1993

Firstpage

139

Lastpage

144

Abstract

A method is presented to measure the doping profile in the channel region of a MOSFET from the small signal AC parameter, dV_SB/dV_GS, and to display the doping profile on the screen of a parameter analyzer. The depletion depth is directly proportional to dV_SB/dV _GS, and the doping density is proportional to its first V _GS derivative. It is shown how the method can be extended to determine the doping profile near the semiconductor surface. This extension method is applicable to any MOSFET dopant profiling technique based on measurements near threshold

Keywords

doping profiles; electric current measurement; insulated gate field effect transistors; semiconductor device testing; MOSFET; channel region; depletion depth; doping density; doping profile; low frequency AC method; semiconductor surface; small signal AC parameter; CMOS technology; Current measurement; Doping profiles; Equations; Frequency measurement; MOSFET circuits; Signal analysis; Substrates; Telecommunications; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on

Conference_Location

Sitges

Print_ISBN

0-7803-0857-3

Type

conf

DOI

10.1109/ICMTS.1993.292880

Filename

292880