Title :
A low frequency AC method to measure the doping profile in the channel region of a MOSFET with general extendability to the semiconductor surface
Author :
Kendall, J.D. ; Kolk, J.K. ; Boothroyd, A.R. ; Vincent, D.A.
Author_Institution :
Northern Telecom Ltd., Ottawa, Ont., Canada
Abstract :
A method is presented to measure the doping profile in the channel region of a MOSFET from the small signal AC parameter, dVSB/dVGS, and to display the doping profile on the screen of a parameter analyzer. The depletion depth is directly proportional to dVSB/dV GS, and the doping density is proportional to its first V GS derivative. It is shown how the method can be extended to determine the doping profile near the semiconductor surface. This extension method is applicable to any MOSFET dopant profiling technique based on measurements near threshold
Keywords :
doping profiles; electric current measurement; insulated gate field effect transistors; semiconductor device testing; MOSFET; channel region; depletion depth; doping density; doping profile; low frequency AC method; semiconductor surface; small signal AC parameter; CMOS technology; Current measurement; Doping profiles; Equations; Frequency measurement; MOSFET circuits; Signal analysis; Substrates; Telecommunications; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
Conference_Location :
Sitges
Print_ISBN :
0-7803-0857-3
DOI :
10.1109/ICMTS.1993.292880
