Title :
Importance of as mole fraction on Auger recombination value in strained MQW GaInAsSb lasers
Author :
Sukhoivanov, I.A. ; Lysak, V.V. ; Mashoshina, O.V. ; Yarekha, D. ; Rouillard, Y. ; Joullie, A.
Author_Institution :
Lab. Photonics, Kharkov Nat. Univ. of Radio Electron., Ukraine
Abstract :
The theoretical analysis that was made shows the way of suppressing of Auger recombination and improving current characteristics of mid-IR long wavelength sources of laser radiation based on InGaAsSb/GaSb.
Keywords :
Auger effect; III-V semiconductors; current density; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser theory; quantum well lasers; semiconductor device models; Auger recombination suppression; InGaAsSb-GaSb; InGaAsSb/GaSb MQW lasers; current characteristics; laser radiation; mid-IR long wavelength sources; Charge carrier processes; Photonic band gap; Pump lasers; Quantum well devices; Radiative recombination; Semiconductor lasers; Solid lasers; Spontaneous emission; Temperature dependence; Threshold current;
Conference_Titel :
4thLaser and Fiber-Optical Networks Modeling, 2002. Proceedings of LFNM 2002. International Workshop on
Print_ISBN :
0-7803-7372-3
DOI :
10.1109/LFNM.2002.1014142
