DocumentCode
1881365
Title
Importance of as mole fraction on Auger recombination value in strained MQW GaInAsSb lasers
Author
Sukhoivanov, I.A. ; Lysak, V.V. ; Mashoshina, O.V. ; Yarekha, D. ; Rouillard, Y. ; Joullie, A.
Author_Institution
Lab. Photonics, Kharkov Nat. Univ. of Radio Electron., Ukraine
fYear
2002
fDate
2002
Firstpage
145
Lastpage
147
Abstract
The theoretical analysis that was made shows the way of suppressing of Auger recombination and improving current characteristics of mid-IR long wavelength sources of laser radiation based on InGaAsSb/GaSb.
Keywords
Auger effect; III-V semiconductors; current density; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser theory; quantum well lasers; semiconductor device models; Auger recombination suppression; InGaAsSb-GaSb; InGaAsSb/GaSb MQW lasers; current characteristics; laser radiation; mid-IR long wavelength sources; Charge carrier processes; Photonic band gap; Pump lasers; Quantum well devices; Radiative recombination; Semiconductor lasers; Solid lasers; Spontaneous emission; Temperature dependence; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
4thLaser and Fiber-Optical Networks Modeling, 2002. Proceedings of LFNM 2002. International Workshop on
Print_ISBN
0-7803-7372-3
Type
conf
DOI
10.1109/LFNM.2002.1014142
Filename
1014142
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