Title :
Modeling and characterization of MOSFET width dependencies
Author :
Ashton, Robert A. ; Layman, Paul A. ; McAndrew, Colin C.
Author_Institution :
AT&T Bell Lab., Orlando, FL, USA
Abstract :
An improved model of MOSFET behavior over width is presented, together with a new, simple, and robust method to determine MOSFET width parameters from measurement data using nonlinear optimization. The authors´ model properly accounts for the variation of effective channel width, series resistance, and threshold voltage with masked channel width and gate bias, and determines all MOSFET width parameters in a consistent manner. Details of test structures used for MOSFET width characterization are given
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor device testing; MOSFET width dependencies; effective channel width; gate bias; masked channel width; model; nonlinear optimization; series resistance; test structures; threshold voltage; width parameters; Capacitance; Electrical resistance measurement; Immune system; MOSFET circuits; Optimization methods; Process control; Process design; Robustness; Testing; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
Conference_Location :
Sitges
Print_ISBN :
0-7803-0857-3
DOI :
10.1109/ICMTS.1993.292881
