Title :
Waveguide HBT electroabsorption modulators: devices and circuits
Author :
Reimann, T. ; Schneider, M. ; Neumann, S. ; Stöhr, A. ; Jäger, D. ; Tegude, F.J.
Author_Institution :
Solid-State Electron. Dept, Gerhard Mercator Univ., Duisburg, Germany
Abstract :
We show the monolithic integration of an HBT and EAM which are merged to a combined device able to operate as an electronic and optical component (HBT-EAM) simultaneously. Comparison to a pure EAM made from the same InP-based layer stack gives an improved optical modulation contrast up to 20 GHz. To demonstrate the concept, a differential amplifier is built which results in a voltage gain of 8 at 2.55 GHz, limited mainly due to a load resistor of 500 Ω. To improve optical modulation an InGaAlAs base is realized to give a better contrast of up to 10 dB, while the DC current gain is 3.5 and has to be optimized
Keywords :
differential amplifiers; electro-optical modulation; electroabsorption; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; microwave photonics; optical waveguides; 2.55 GHz; 20 GHz; EAM; HBTs; InGaAlAs; InGaAlAs base; InP; InP-based layer stack; combined device; differential amplifier; electroabsorption waveguide modulator; monolithic optoelectronic integration; optical modulation contrast; waveguide HBT electroabsorption modulators; Differential amplifiers; Heterojunction bipolar transistors; Monolithic integrated circuits; Optical devices; Optical modulation; Optical waveguides; Resistors; Solid state circuits; Stimulated emission; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Conference_Location :
Stockholm
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014146
