Title :
An approach for relating model parameter variabilities to process fluctuations
Author :
Power, J.A. ; Mathewson, A. ; Lane, W.A.
Author_Institution :
Nat. Microelectron. Res. Center, Univ. Coll. Cork, Ireland
Abstract :
A methodology that makes it possible to link circuit simulator model parameter variations and correlations to disturbances in the IC manufacturing process is presented. An example in which the variabilities among a set of 30 correlated empirical MOSFET model parameters from a 2-μm CMOS process are represented by the variabilities of just six uncorrelated components with the aid of principal component analysis (PCA) and VARIMAX transformations is described. The derived uncorrelated components are interpreted in terms of the probable process input fluctuations causing them. These independent components may then be utilized to form the basis of realistic worst-case design methodologies or more rigorous statistical design techniques
Keywords :
CMOS integrated circuits; digital simulation; integrated circuit technology; semiconductor process modelling; CMOS process; IC manufacturing process; VARIMAX transformations; circuit simulator; empirical MOSFET model; model parameter variabilities; principal component analysis; process fluctuations; process input fluctuations; statistical design techniques; uncorrelated components; worst-case design methodologies; Circuit optimization; Design engineering; Design for manufacture; Fluctuations; Independent component analysis; MOSFET circuits; Performance analysis; Principal component analysis; Reliability engineering; Semiconductor device modeling;
Conference_Titel :
Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
Conference_Location :
Sitges
Print_ISBN :
0-7803-0857-3
DOI :
10.1109/ICMTS.1993.292892
