Title :
SEU/SRAM as a process monitor
Author :
Blaes, B.R. ; Buehler, M.G.
Author_Institution :
Jet Propulsion Lab., Pasadena, CA, USA
Abstract :
The SEU/SRAM is a 4-b static random access memory (SRAM) designed to detect single-event upsets (SEUs) produced by high energy particles. This device is used to determine the distribution in the memory cell spontaneous flip potential. The variance in this potential is determined to be due to the variation in the n-MOSFET threshold voltage. For a 1.2-μm CMOS process, the standard deviation is found to be 8 mV. Using cumulative distribution and residual plots, stuck cells and nonnormally distributed cells are easily identified
Keywords :
CMOS integrated circuits; SRAM chips; cellular arrays; 1.2 micron; CMOS process; SEU/SRAM; cumulative distribution; high energy particles; memory cell spontaneous flip potential; n-MOSFET threshold voltage; nonnormally distributed cells; process monitor; residual plots; single-event upsets; stuck cells; CMOS process; Electrical resistance measurement; Inverters; MOSFETs; Monitoring; Random access memory; Semiconductor device modeling; Single event upset; Testing; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
Conference_Location :
Sitges
Print_ISBN :
0-7803-0857-3
DOI :
10.1109/ICMTS.1993.292893
