A direct, reliable, measurement-based technique for the extraction of an on-chip HBT dummy structure equivalent circuit

Author

Lu, Ke ; Perry, Philip ; Brazil, Thomas J.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. Dublin, Ireland

fYear

1993

fDate

22-25 Mar 1993

Firstpage

27

Lastpage

30

Abstract

A reliable measurement-based technique is introduced to extract dummy structure modeling parameters which are used to deembed the intrinsic S-parameters of an on-chip heterojunction bipolar transistor (HBT) device. The entire parameter set of the dummy structure equivalent circuit is obtained by direct processing of the measurement data. This avoids the need for computer optimization which often produces unrealistic results. An example is given to demonstrate the method, and the structure model is applied to reveal the intrinsic device S-parameters of an HBT

Keywords

S-parameters; bipolar integrated circuits; equivalent circuits; heterojunction bipolar transistors; direct processing; equivalent circuit; intrinsic S-parameters; measurement-based technique; on-chip HBT dummy structure; Data mining; Electric variables measurement; Equivalent circuits; Heterojunction bipolar transistors; MMICs; Parameter extraction; Probes; Radio frequency; Scattering parameters; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on

Conference_Location

Sitges

Print_ISBN

0-7803-0857-3

Type

conf

DOI

10.1109/ICMTS.1993.292898

Filename

292898