An investigation into the nonquasistatic effects in MOS devices with on-wafer S-parameter techniques

Author

Singh, Rajinder ; Juge, A. ; Joly, René ; Mortin, G.

Author_Institution

SGS-Thomson Microelectron., Grenoble, France

fYear

1993

fDate

22-25 Mar 1993

Firstpage

21

Lastpage

25

Abstract

The high-frequency characteristics of MOS devices are investigated with a view to the identification of nonquasistatic (NQS) effects considering the Bagheri and Tsividis I-order NQS model as a reference. An exhaustive set of data is analyzed. It indicates the existence of NQS effects in long- as well as short-channel devices. Significant differences are observed between a charge based quasi-static model and measurements for a long-channel (25-μm) device. A deembedding technique is suggested to observe the intrinsic device behavior up to a higher range of frequencies

Keywords

S-parameters; insulated gate field effect transistors; semiconductor device models; solid-state microwave devices; Bagheri and Tsividis I-order NQS model; MOS devices; NQS effects; charge based quasi-static model; deembedding technique; high-frequency characteristics; intrinsic device behavior; long-channel devices; nonquasistatic effects; on-wafer S-parameter techniques; short-channel devices; Capacitance; Current measurement; Data analysis; Frequency; Hafnium; MOS devices; Microelectronics; Research and development; Scattering parameters; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on

Conference_Location

Sitges

Print_ISBN

0-7803-0857-3

Type

conf

DOI

10.1109/ICMTS.1993.292899

Filename

292899