A methodology for pre-determination of bipolar SPICE model parameters in BiCMOS technology

Author

Aggarwal, Sudhir ; Juge, André

Author_Institution

SGS-Thomson Microelectron., Grenoble, France

fYear

1993

fDate

22-25 Mar 1993

Firstpage

15

Lastpage

20

Abstract

In order to minimize measurement efforts, a methodology is proposed for obtaining SPICE (simulation program with IC emphasis) model parameters for bipolar devices of varying sizes available in a BiCMOS technology. The methodology is based on the partitioning of terminal currents and capacitances into area- and perimeter-dependent unit parameters. Model parameters are provided for all devices in a manner consistent with controllable accuracy indicators. This approach allows pre-determination of the model parameters for the devices which are yet to be fabricated

Keywords

BiCMOS integrated circuits; SPICE; circuit analysis computing; digital simulation; semiconductor device models; BiCMOS technology; bipolar SPICE model parameters; capacitances; controllable accuracy indicators; partitioning; perimeter-dependent unit parameters; simulation program; terminal currents; BiCMOS integrated circuits; Capacitance measurement; Current density; Current measurement; Electrical resistance measurement; Parameter extraction; Resistors; SPICE; Size measurement; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on

Conference_Location

Sitges

Print_ISBN

0-7803-0857-3

Type

conf

DOI

10.1109/ICMTS.1993.292900

Filename

292900