The effects of channel width tapering on the power dissipation of serially connected MOSFET
Author :
Friedman, Eby G.
fYear :
1993
fDate :
3-6 May 1993
Firstpage :
2110
Lastpage :
2113
Keywords :
Delay effects; Integrated circuit synthesis; MOS devices; MOSFET circuits; Parasitic capacitance; Power MOSFET; Power dissipation; Power supplies; Propagation delay; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on
