DocumentCode
1881868
Title
Evaluations of leakage currents and capacitances on elementary CMOS devices
Author
Girard, P. ; Nouet, P. ; Khalkhal, A. ; Roche, F.M.
Author_Institution
Lab. d´´Inf., Montpellier II Univ., France
fYear
1993
fDate
22-25 Mar 1993
Firstpage
289
Lastpage
292
Abstract
A method allowing the easy determination of currents and capacitances of integrated structures in the femtoampere and femtofarad ranges, respectively, is developed. It involves some test structures and, as equipment, a standard transistor parameter analyzer. In the case of minimum size diodes for a 1.5-μm CMOS technology, experimental results show the capabilities of the method, and good consistency with simulation
Keywords
CMOS integrated circuits; capacitance measurement; electric current measurement; integrated circuit technology; integrated circuit testing; 1.5 micron; CMOS technology; capacitances; elementary CMOS devices; femtofarad ranges; integrated structures; leakage currents; minimum size diodes; transistor parameter analyzer; CMOS technology; Capacitance measurement; Circuit testing; Current measurement; Diodes; Integrated circuit technology; Leakage current; MOSFETs; Parasitic capacitance; Zero voltage switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
Conference_Location
Sitges
Print_ISBN
0-7803-0857-3
Type
conf
DOI
10.1109/ICMTS.1993.292905
Filename
292905
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