Title :
Low cost UTSi technology for RF wireless applications
Author :
Megahed, M. ; Burgener, M. ; Cable, J. ; Benton, R. ; Staab, D. ; Stuber, M. ; Dennies, P. ; Reedy, R.
Author_Institution :
Peregrine Semicond. Corp., San Diego, CA, USA
Abstract :
Ultra Thin Silicon (UTSi) IC technology has been developed for RF, analog, and digital signal applications. The technology is based on low cost CMOS VLSI technology with fully integrated passive components. The insulating substrate provides high isolation and high quality passive components, paving the way for on-chip matching elements. For the first time, excellent high-speed/high-frequency performance is simultaneously demonstrated by the highly integrated UTSi technology.
Keywords :
CMOS integrated circuits; VLSI; isolation technology; mobile communication; semiconductor thin films; CMOS VLSI technology; RF wireless applications; Si; fully integrated passive components; high-frequency performance; high-speed performance; isolation; low cost UTSi technology; on-chip matching elements; ultra thin silicon IC technology; Analog integrated circuits; Application specific integrated circuits; CMOS technology; Costs; Digital integrated circuits; Isolation technology; RF signals; Radio frequency; Radiofrequency integrated circuits; Silicon on insulator technology;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705156
