Title :
High frequency performance of Sb-heterostructure millimeter-wave diodes
Author :
Schulman, J.N. ; Thomas, S. ; Chow, D.H. ; Croke, E.T. ; Dunlap, H.L. ; Holabird, K.S. ; Clark, W.M. ; Morgan, M.A. ; Weinreb, S.
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
We have developed a new zero bias millimeter wave diode based on quantum tunneling in an InAs/AlSb/GaSb nanostructure. It is ideal for square law radiometry and passive millimeter wave imaging. Excellent sensitivity has been demonstrated at present up to 110 GHz, with higher bandwidth predicted for smaller area diodes.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; millimetre wave detectors; millimetre wave diodes; millimetre wave imaging; radiometry; semiconductor device measurement; sensitivity; tunnelling; 110 GHz; EHF; InAs-AlSb-GaSb; InAs/AlSb/GaSb nanostructure; Sb-heterostructure diode; bandwidth; high frequency performance; millimeter wave diode; passive MM-wave imaging; quantum tunneling; sensitivity; square law radiometry; zero bias MM-wave diode; zero bias direct detection; Frequency; Laboratories; Local oscillators; Millimeter wave technology; Millimeter wave transistors; Reproducibility of results; Semiconductor diodes; Space exploration; Tunneling; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014164
