DocumentCode
1881941
Title
Channel-width measurements of LOCOS- and trench-isolated n-MOSFETs by photoemission
Author
Ohzone, Takashi ; Iwata, Hideyuki
Author_Institution
Dept. of Electron. & Inf., Toyama Prefectural Univ., Toyama, Japan
fYear
1993
fDate
22-25 Mar 1993
Firstpage
269
Lastpage
274
Abstract
A simple, accurate, and nondestructive method for measuring the channel width of a processed n-MOSFET by using a high-resolution photoemission microscope is proposed. It is confirmed for test devices with local application of silicon (LOCOS) and trench isolation that the method can be applicable to n-MOSFETs with submicron channel width
Keywords
insulated gate field effect transistors; nondestructive testing; photoemission; semiconductor device testing; LOCOS-isolated n-MOSFETs; channel width; local application of silicon; nondestructive method; photoemission; submicron channel; trench-isolated n-MOSFETs; Charge coupled devices; Dielectric measurements; Isolation technology; MOSFET circuits; Optical filters; Optical microscopy; Optical scattering; Optical variables control; Photoelectricity; Scanning electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
Conference_Location
Sitges
Print_ISBN
0-7803-0857-3
Type
conf
DOI
10.1109/ICMTS.1993.292908
Filename
292908
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