DocumentCode :
1881951
Title :
Leveraging Heterogeneity in DRAM Main Memories to Accelerate Critical Word Access
Author :
Chatterjee, Niladrish ; Shevgoor, M. ; Balasubramonian, R. ; Davis, A.K. ; Zhen Fang ; Illikkal, Ramesh ; Iyer, Ravishankar
fYear :
2012
fDate :
1-5 Dec. 2012
Firstpage :
13
Lastpage :
24
Abstract :
The DRAM main memory system in modern servers is largely homogeneous. In recent years, DRAM manufacturers have produced chips with vastly differing latency and energy characteristics. This provides the opportunity to build a heterogeneous main memory system where different parts of the address space can yield different latencies and energy per access. The limited prior work in this area has explored smart placement of pages with high activities. In this paper, we propose a novel alternative to exploit DRAM heterogeneity. We observe that the critical word in a cache line can be easily recognized beforehand and placed in a low-latency region of the main memory. Other non-critical words of the cache line can be placed in a low-energy region. We design an architecture that has low complexity and that can accelerate the transfer of the critical word by tens of cycles. For our benchmark suite, we show an average performance improvement of 12.9% and an accompanying memory energy reduction of 15%.
Keywords :
DRAM chips; cache storage; DRAM main memory system; DRAM manufacturers; cache line; critical word access; energy characteristics; energy reduction; latency characteristics; low-latency region; noncritical words;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microarchitecture (MICRO), 2012 45th Annual IEEE/ACM International Symposium on
Conference_Location :
Vancouver, BC
ISSN :
1072-4451
Print_ISBN :
978-1-4673-4819-5
Type :
conf
DOI :
10.1109/MICRO.2012.11
Filename :
6493604
Link To Document :
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