• DocumentCode
    1882058
  • Title

    High breakdown voltage In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMT using InxGa1-xP graded buffer

  • Author

    Yuan, K. ; Radhakrishnan, K.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    161
  • Lastpage
    164
  • Abstract
    Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMT grown on GaAs with InxGa1-xP (x=0.48→1) graded buffer layer is reported. In this design the In0.53Ga0.47As channel layer was grown on top of the InGaP graded buffer directly without an InAlAs buffer as in the conventional design. The device shows high breakdown voltage: the measured on-state and off-state breakdown voltage are 11 V and 23 V, respectively, at a gate current of 0.1 mA/mm. The impact ionization rate and its dependence on temperature is also measured and analyzed, and the possible mechanism of the high breakdown voltage achieved is discussed. The metamorphic HEMT shows promising performance for its potential in power applications.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; impact ionisation; indium compounds; power HEMT; semiconductor device breakdown; 11 V; 23 V; In0.52Al0.48As-In0.53Ga0.47As; In0.53Ga0.47As channel layer; InxGa1-xP graded buffer; InGaP; MHEMTs; high breakdown voltage; impact ionization rate; metamorphic HEMT; power applications; Buffer layers; Current measurement; Gallium arsenide; HEMTs; Impact ionization; Indium compounds; Temperature dependence; Temperature measurement; Voltage measurement; mHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-7320-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2002.1014170
  • Filename
    1014170
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1882058