Limitations of electrical test information: a case study with polysilicon emitter contacts

Author

Johnson, Molly ; Strojwas, A.J. ; Greve, D.W. ; Reuss, R.A. ; Flowers, A.

Author_Institution

Carnegie Mellon Univ., Pittsburgh, PA, USA

fYear

1993

fDate

22-25 Mar 1993

Firstpage

237

Lastpage

240

Abstract

It is shown in two case studies on polysilicon emitter contacts that electrical measurements are not sufficient on their own to understand observed variations in the devices under study. Combined with physical information from transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) it is possible to see more clearly links between processing, structure, and electrical performance. Both interfacial oxide effects and emitter dose effects are discussed

Keywords

bipolar transistors; secondary ion mass spectroscopy; semiconductor device testing; transmission electron microscopy; Si; electrical test information; emitter dose effects; interfacial oxide effects; polysilicon emitter contacts; secondary ion mass spectroscopy; transmission electron microscopy; Annealing; Circuit synthesis; Circuit testing; Computer aided software engineering; Contacts; Electric variables measurement; Electrical resistance measurement; Furnaces; Instruments; Manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on

Conference_Location

Sitges

Print_ISBN

0-7803-0857-3

Type

conf

DOI

10.1109/ICMTS.1993.292913

Filename

292913