High speed wavelength conversion in a heterogeneously integrated disc laser over silicon on insulator for network on a chip applications

Author

Raz, O. ; Liu, L. ; Van Thourhout, D. ; Rojo-Romeo, P. ; Fédéli, J.M. ; Dorren, H.J.S.

Author_Institution

Eindhoven Univ. of Technol., Eindhoven, Netherlands

fYear

2009

fDate

20-24 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

We present the first BER results for wavelength conversion at 2.5 Gb/s for an InP membrane micro-disc-laser bonded on SOI substrate. Measured BER supports error-free operation when FEC is used. Operation at 10 GB/s is also demonstrated.

Keywords

III-V semiconductors; forward error correction; high-speed optical techniques; indium compounds; integrated optoelectronics; microdisc lasers; network-on-chip; optical interconnections; optical wavelength conversion; semiconductor lasers; silicon-on-insulator; FEC; Si-SiO₂; bit rate 10 Gbit/s; bit rate 2.5 Gbit/s; forward error correction; heterogeneously integrated disc laser; high speed wavelength conversion; microdisc laser; network-on-a-chip applications; silicon-on-insulator; Biomembranes; Bit error rate; Bonding; Error-free operation; Forward error correction; Indium phosphide; Network-on-a-chip; Semiconductor device measurement; Silicon on insulator technology; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 2009. ECOC '09. 35th European Conference on

Conference_Location

Vienna

Print_ISBN

978-1-4244-5096-1

Type

conf

Filename

5287069