DocumentCode
1882251
Title
Power cycling with high temperature swing of discrete components based on different technologies
Author
Amro, R. ; Lutz, J. ; Lindemann, A.
Author_Institution
TU Chemnitz, Germany
Volume
4
fYear
2004
fDate
2004
Firstpage
2593
Abstract
We present the results of power cycling tests of transfer molded, DCB and copper based power components at temperature swings up to 155 K. The results of the DCB based components are statistically analysed with Weibull distribution. An Analysis of the components after the tests provides an overview on the failure mechanisms. The results of the DCB based, transfer molded components exceed the expectations based on extrapolation of LESIT results.
Keywords
Weibull distribution; power semiconductor devices; semiconductor device packaging; semiconductor device testing; statistical analysis; Weibull distribution; discrete components; high temperature swing; power components; power cycling; statistical analysis; Bonding; Chemical technology; Copper; Failure analysis; Heat sinks; Lead; Semiconductor device packaging; Substrates; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
ISSN
0275-9306
Print_ISBN
0-7803-8399-0
Type
conf
DOI
10.1109/PESC.2004.1355239
Filename
1355239
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