• DocumentCode
    1882252
  • Title

    Thermal behavior of doped polyaniline

  • Author

    Xlanhong Wang ; Yanhou Geng ; Lixiang Wang ; Xiabin Jing ; Fosng Wang

  • Author_Institution
    Changchun Institute of Applied Chemistry
  • fYear
    1994
  • fDate
    24-29 July 1994
  • Firstpage
    76
  • Lastpage
    76
  • Abstract
    Summary form only given. Thermal stability in air of polyaniline (PAn) doped with different dopant has been investigated by TG, DSC and in-situ electrical conductivity measurements. The onset temperature of apparent dopant evolution (Tc) for doped-PAn varies greatly from dopant to dopant. H/sub 2/SO/sub 4/- doped PAn is still stable at 190/spl deg/C whereas HCl evolves at 150/spl deg/C for the HCl-doped PAn. Electrical conductivity of sulfonated polyaniline keeps unchanged after it is treated at 200/spl deg/C for 2hr, but decreases 3-4 orders of magnitude after it is treated at 220/spl deg/C for 3hr. Thermal stability of PAn doped with organic acid such as (p-toluene sulfonic acid (TSA) , naphthalene 1,5-disulfonic acid or 5-sulphosaIicylic acid) is better than that doped with inorganic acids. The electrical conductivity of TSA-doped PAn decreases 4 orders of magnitude after it is treated at 230/spl deg/C for 2hr, but the IR and elemental analysis indicate that there is no dopant evolution during thermal treatment. The serious thermal oxidative cross-linking between PAn molecular chains at 220-250/spl deg/C is responsible for the decrease in electrical conductivity. Thermal stability of PAn doped with macromolecular acid (sulfonated polystyrene and sulfonated poly-p-phenylene oxide) is better than that of low molecular acid doped PAn.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Science and Technology of Synthetic Metals, 1994. ICSM '94. International Conference on
  • Conference_Location
    Seoul, Korea
  • Type

    conf

  • DOI
    10.1109/STSM.1994.834766
  • Filename
    834766