Title :
A 10-Gbit/s laser driver IC with i-AlGaAs/n-GaAs doped-channel hetero-MISFETs (DMTs)
Author :
Suzuki, Y. ; Hida, H. ; Suzaki, T. ; Fujita, S. ; Ogawa, Y. ; Okamoto, A. ; Toda, T. ; Nozaki, T.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
Ultra-high-speed laser driver ICs for multigigabit per second optical communication systems have been demonstrated using gate recess structure doped-channel hetero-MISFETs (DMTs) with 0.35- mu m-length gates. The laser driver ICs were fabricated with advanced processes, such as direct-writing electron-beam lithography and air-bridge interconnects. They have operated at 10 Gb/s with risetimes and falltimes as fast as 40 ps, which is the highest speed ever reported. The laser driver ICs can drive up to 60 mA into a 25- Omega load. In addition, direct laser diode modulation has been realized at 10-Gb/s.<>
Keywords :
III-V semiconductors; MOS integrated circuits; aluminium compounds; amplifiers; driver circuits; gallium arsenide; integrated circuit technology; optical communication equipment; 0.35 micron; 10 Gbit/s; 25 ohm; 40 ps; 60 mA; DMTs; air-bridge interconnects; direct laser diode modulation; direct-writing electron-beam lithography; doped-channel hetero-MISFETs; falltimes; gate recess structure; multigigabit per second optical communication systems; risetimes; semiconductors; ultra high speed laser driver IC; Diode lasers; Fabrication; Gallium arsenide; Gold; Laboratories; Lithography; OFDM modulation; Optical pulse generation; Semiconductor lasers; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69310
