Title :
A direct extraction algorithm for a submicron MOS transistor model
Author :
Karlsson, Peter R. ; Jeppson, Kjell O.
Author_Institution :
Dept. of Solid State Electron., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
A four-point technique for direct extraction of the linear region model parameters of submicron transistors is presented. The choice of data points for minimizing sensitivity to measurement noise is discussed. For a submicron transistor model where a second order mobility reduction factor is included to model the quadratic gate voltage dependence, direct extraction of the four linear-region parameters is possible using only four data points. This means that efficient parameter extraction is facilitated and that this type of submicron transistor model can be used in production control
Keywords :
carrier mobility; insulated gate field effect transistors; semiconductor device models; direct extraction algorithm; four-point technique; linear region model parameters; measurement noise; production control; quadratic gate voltage dependence; second order mobility reduction factor; submicron MOS transistor model; Circuit noise; Data mining; Geometry; MOSFETs; Noise measurement; Sensitivity analysis; Solid modeling; Solid state circuits; Threshold voltage; Transistors;
Conference_Titel :
Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
Conference_Location :
Sitges
Print_ISBN :
0-7803-0857-3
DOI :
10.1109/ICMTS.1993.292928
