Author :
Cooper, James A., Jr.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Silicon carbide (SiC) is the only compound semiconductor whose native oxide is SiO2. This makes it possible to construct a variety of MOS devices in SiC. However, the SiC MOS interface is more complex than on silicon, due to the presence of carbon in the compound and the non-cubic crystal structure. Over the last few years, the midgap interface state density on p-type 6H-SiC has been reduced from the mid-1011 to the mid-1010 eV-1 cm -2 range, and the fixed oxide charge from about 2×10 12 to 5×1011 cm-2. Studies of oxide reliability are underway, and preliminary results on n-type 6H-SiC extrapolate to a lifetime of 20,000 years at a field of 3 MV/cm at 145°C
Keywords :
MIS devices; interface states; oxidation; silicon compounds; wide band gap semiconductors; 145 C; 20000 year; MOS device; SiC-SiO2; compound semiconductor; fixed oxide charge; lifetime; midgap interface state density; n-type 6H-SiC; native oxide; noncubic crystal structure; p-type 6H-SiC; reliability; silicon carbide; Silicon compounds;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1997. Proceedings., 1997 IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1997.649363
