Title :
The modified Schiffman phase shifter
Author :
Gorbachev, Anatoly P. ; Churkin, Vadim S. ; Vasilenko, Artem A.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Abstract :
This paper presents the modified 90-degree Schiffman phase shifter (phaser). The new phaser is based on the reentrant structure with unequal dielectric constants of the interior and exterior microstrip substrates. The general TEM circuit model for the proposed phaser in terms of a series connection of the two-ports is presented and then used to determine its electrical parameters. As a result, the modified Schiffman phaser (SP) has a good performance over almost octave frequency range and compact multilayer architecture, showing promising potential for a variety of applications.
Keywords :
equivalent circuits; permittivity; phase shifters; transmission electron microscopy; TEM circuit model; compact multilayer architecture; dielectric constants; electrical parameters; exterior microstrip substrate; interior microstrip substrate; modified 90-degree Schiffman phase shifter; Helium; Linear matrix inequalities; Microwave FET integrated circuits; Microwave integrated circuits; Microwave theory and techniques; Symmetric matrices; Zinc; Phase shifter; Schiffman phaser; multilayer implementation; reentrant structure;
Conference_Titel :
Actual Problems of Electronic Instrument Engineering (APEIE), 2010 10th International Scientific-Technical Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-8209-2
Electronic_ISBN :
978-1-4244-8210-8
DOI :
10.1109/APEIE.2010.5677307