On strong field nonlinear effect in semiconductor lasers

A new strong field nonlinear effect in semiconductor lasers is described. This effect follows from the increase of the effective width of forbidden band Ēg from the amplitude of electric field E, which necessitates the introduction of effective stimulated transition function D(Ẹ,Ꮗ), strongly dependent on E. It is shown that the gain g(E) which is proportional to D(Ẹ,Ꮗ) has a stepped dependence upon the threshold amplitude of electric field. The expression for D(Ẹ,Ꮗ) may be useful for the output power calculation and for the explanation of one-mode output power restriction.