Title :
Numerical simulations of the SiC thyristor´s on state and gate turn off performance
Author :
Shah, Pankaj ; Jones, Kenneth A.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
Abstract :
Two-dimensional, nonisothermal, drift-diffusion model based numerical simulations have been performed on gate turn off (GTO) SiC thyristor structures to investigate the on state properties and turn off performance. The low carrier mobility, and the incomplete ionization of deep impurities leads to steps or a steep grade, in the I-V curve in the negative differential resistance region (NDR) of structures with high doped base regions. These NDR region shape has been experimentally observed in the past. Carrier lifetime also influences the shape of the NDR region. Structures exhibiting these steps or high grade in the NDR region have slower gate turn off performance than structures with a flatter NDR region
Keywords :
carrier lifetime; carrier mobility; negative resistance devices; semiconductor device models; semiconductor materials; silicon compounds; thyristors; I-V characteristics; SiC; SiC thyristor; carrier lifetime; carrier mobility; deep impurity ionization; gate turn off; negative differential resistance; numerical simulation; on state; two-dimensional nonisothermal drift-diffusion model; Semiconductor materials;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1997. Proceedings., 1997 IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1997.649364
