Numerical simulations of the SiC thyristor´s on state and gate turn off performance

Two-dimensional, nonisothermal, drift-diffusion model based numerical simulations have been performed on gate turn off (GTO) SiC thyristor structures to investigate the on state properties and turn off performance. The low carrier mobility, and the incomplete ionization of deep impurities leads to steps or a steep grade, in the I-V curve in the negative differential resistance region (NDR) of structures with high doped base regions. These NDR region shape has been experimentally observed in the past. Carrier lifetime also influences the shape of the NDR region. Structures exhibiting these steps or high grade in the NDR region have slower gate turn off performance than structures with a flatter NDR region