Simulation of I–V characteristics of Quantum dot based solar cell: Stability estimation

We have investigated a Quantum dot based solar cell model which was practically experimented in the laboratory and taking the experimental values of open circuit voltage, short circuit current density, series and shunt resistances I–V curves for two sample of solar cells A and B at different time period were simulated. Efficiency and Fill Factor were being observed from the curves after a period of 1, 6, 9, 23 days respectively. Both the Efficiency and Fill factor simulated from I–V curves are more or less matched with practical data and the samples remain stable as there is less fluctuations of the simulated parameters from the practically obtained values.