Title :
Temperature dependent performance analysis of intersubband thermophotovoltaic structure
Author :
Saurov, Sumit Narayan
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
Intersubband transition based multiple junction quantum cascade thermophotovoltaic device has been proposed using AlN/GaN heterostructure. Temperature effect on the dark current has been investigated numerically to analyze its effect on the performance of thermophotovoltaic structure.
Keywords :
aluminium compounds; dark conductivity; gallium compounds; thermophotovoltaic cells; AlN-GaN; dark current; intersubband thermophotovoltaic structure; multiple junction quantum cascade thermophotovoltaic device; temperature dependent performance analysis; Dark current; Energy conversion; Energy states; Gallium nitride; III-V semiconductor materials; Temperature dependence; Carrier relaxation; dark current; electromagnetic; photocurrent; photovoltaic;
Conference_Titel :
Developments in Renewable Energy Technology (ICDRET), 2014 3rd International Conference on the
Conference_Location :
Dhaka
DOI :
10.1109/ICDRET.2014.6861725
