DocumentCode :
1883550
Title :
Plasma chemical etching of silicon in chlorine to containing plasma, used in nanoelectronics
Author :
Bogomolov, Boris K.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fYear :
2010
fDate :
22-24 Sept. 2010
Firstpage :
23
Lastpage :
29
Abstract :
It is experimentally confirmed that transition a topokinetic stage plasma of chemical etching of silicon in diffusion occurs around a maximum of dependence of speed of etching from the oxygen maintenance in plasma CF2Cl2/O2. The load effect is studied. Results of article well correlate with the data received in the reactor of high density plasma TCP 2300 Versys Kiyo LAM Research corporations.
Keywords :
carbon compounds; chlorine compounds; fluorine compounds; nanoelectronics; silicon; sputter etching; CF2Cl2-O2; chlorine; nanoelectronics; oxygen maintenance; plasma chemical etching; silicon; topokinetic stage plasma; Artificial neural networks; Etching; Fluctuations; Oxygen; RNA; Silicon; Nanoelectronics; Plasma etching; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Actual Problems of Electronic Instrument Engineering (APEIE), 2010 10th International Scientific-Technical Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-8209-2
Electronic_ISBN :
978-1-4244-8210-8
Type :
conf
DOI :
10.1109/APEIE.2010.5677337
Filename :
5677337
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1883550
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