• DocumentCode
    188357
  • Title

    Effect of strain on the efficiency of InGaN-based multijunction solar cell

  • Author

    Rahman, Md.Aminur ; Islam, Md.Rafiqul

  • Author_Institution
    Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology (KUET), 9203, Bangladesh
  • fYear
    2014
  • fDate
    29-31 May 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, the strain-dependent efficiency of multijunction solar cell (MJSC) is reported for the first time. Using multilayered strain model, the strain induced due to the change in lattice constants in different layers of MJSC is calculated. With the combination of strain and deformation potentials the strain-induced change in band gap energy of different subcells is estimated. The results obtained in our study demonstrate that the efficiency of InGaN-based MJSC is increased under the influence of strain compared to that evaluated without taking into account of strain. It is also found that the strain-dependent change in efficiency depends on the number of subcell layers and their thicknesses. The enhancement of efficiency is resulted from the increasing of open circuit voltage of the subcells under the influence of compressive strain.
  • Keywords
    Gallium nitride; Junctions; Lattices; Materials; Photonic band gap; Photovoltaic cells; Strain; InGaN-based MJSC; Strain; efficiency enhancement; multilayered strain model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Developments in Renewable Energy Technology (ICDRET), 2014 3rd International Conference on the
  • Conference_Location
    Dhaka, Bangladesh
  • Type

    conf

  • DOI
    10.1109/ICDRET.2014.6861726
  • Filename
    6861726