DocumentCode
1883570
Title
10Gb/s 15mW optical receiver with integrated Germanium photodetector and hybrid inductor peaking in 0.13µm SOI CMOS technology
Author
Kucharski, Daniel ; Guckenberger, Drew ; Masini, G. ; Abdalla, S. ; Witzens, J. ; Sahni, Shashank
Author_Institution
Luxtera, Carlsbad, CA, USA
fYear
2010
fDate
7-11 Feb. 2010
Firstpage
360
Lastpage
361
Abstract
A 10 Gb/s optical receiver with an integrated germanium photodetector is presented. The receiver is fabricated in a silicon-photonics-enabled 0.13 μm SOI CMOS technology. The high-speed circuits consume 15 mW, achieving sensitivity of 6 μA p-p at BER = 10-12 with less than 5 ps of DJ. Photodetector dark current is 3 μA at a reverse bias of 1 V, and responsivity is 0.8 A/W.
Keywords
CMOS integrated circuits; germanium; high-speed integrated circuits; optical receivers; photodetectors; silicon-on-insulator; SOI CMOS technology; high-speed circuits; hybrid inductor; integrated germanium photodetector; optical receiver; reverse bias; silicon-on-insulator; silicon-photonics-enabled; Active inductors; CMOS technology; Germanium; Optical attenuators; Optical receivers; Optical sensors; Optical waveguides; Photodetectors; Resistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4244-6033-5
Type
conf
DOI
10.1109/ISSCC.2010.5433819
Filename
5433819
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