Title :
10Gb/s 15mW optical receiver with integrated Germanium photodetector and hybrid inductor peaking in 0.13µm SOI CMOS technology
Author :
Kucharski, Daniel ; Guckenberger, Drew ; Masini, G. ; Abdalla, S. ; Witzens, J. ; Sahni, Shashank
Author_Institution :
Luxtera, Carlsbad, CA, USA
Abstract :
A 10 Gb/s optical receiver with an integrated germanium photodetector is presented. The receiver is fabricated in a silicon-photonics-enabled 0.13 μm SOI CMOS technology. The high-speed circuits consume 15 mW, achieving sensitivity of 6 μA p-p at BER = 10-12 with less than 5 ps of DJ. Photodetector dark current is 3 μA at a reverse bias of 1 V, and responsivity is 0.8 A/W.
Keywords :
CMOS integrated circuits; germanium; high-speed integrated circuits; optical receivers; photodetectors; silicon-on-insulator; SOI CMOS technology; high-speed circuits; hybrid inductor; integrated germanium photodetector; optical receiver; reverse bias; silicon-on-insulator; silicon-photonics-enabled; Active inductors; CMOS technology; Germanium; Optical attenuators; Optical receivers; Optical sensors; Optical waveguides; Photodetectors; Resistors; Voltage;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6033-5
DOI :
10.1109/ISSCC.2010.5433819
